052-6436 rev a 5-2014 APT70GR65B2DU40 symbol parameter ratings unit v ces collector emitter voltage 650 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 134 a i c2 continuous collector current @ t c = 110c 65 i cm pulsed collector current 1 280 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 595 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics APT70GR65B2DU40 650v, 70a, v ce(on) = 1.9v typical microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 350 a) 650 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 1.0ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 70a, t j = 25c) 1.9 2.4 collector-emitter on voltage (v ge = 15v, i c = 70a, t j = 125c) 2.4 collector-emitter on voltage (v ge = 15v, i c = 140a, t j = 25c) 2.6 i ces collector cut-off current (v ce = 650v, v ge = 0v, t j = 25c) 2 20 350 a collector cut-off current (v ce = 650v, v ge = 0v, t j = 125c) 2 200 i ges gate-emitter leakage current (v ge = 20v) 250 na unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). ultra fast npt - igbt ? with ultra soft recovery diode the ultra fast 650v npt-igbt ? family of products is the newest generation of igbts optimized for outstanding ruggedness and best trade-off between conduction and switching losses. features low saturation voltage low tail current rohs compliant smooth reverse recovery short circuit withstand rated high frequency switching ultra low leakage current snap-free switching combi (igbt and diode) downloaded from: http:///
APT70GR65B2DU40 052-6436 rev a 5-2014 typical performance curves thermal and mechanical characteristics dynamic characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 4250 pf c oes output capacitance 847 c res reverse transfer capacitance 415 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 325v i c = 70a 7.0 v q g 3 total gate charge 226 305 nc q ge gate-emitter charge 26 35 q gc gate- collector charge 104 140 t d(on) turn-on delay time inductive switching (25c) v cc = 433v v ge = 15v i c = 70a r g = 4.3 4 t j = +25c 18 ns t r current rise time 49 t d(off) turn-off delay time 170 t f current fall time 67 e on2 5 turn-on switching energy 1868 2800 j e off 6 turn-off switching energy 1470 2205 t d(on) turn-on delay time inductive switching (125c) v cc = 433v v ge = 15v i c = 70a r g = 4.3 4 t j = +125c 17 ns t r current rise time 51 t d(off) turn-off delay time 190 t f current fall time 74 e on2 5 turn-on switching energy 2616 3920 j e off 6 turn-off switching energy 1900 2865 0 0.05 0.10 0.15 0.20 0.25 0.00001 0.0001 0.001 0.01 0.1 1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) 0.21 c/w junction to case thermal resistance (diode) 0.61 r ja junction to ambient thermal resistance 40 w t package weight 0.22 oz 6.2 g downloaded from: http:///
052-6436 rev a 5-2014 APT70GR65B2DU40 typical performance curves 0 20 40 60 80 100 120 140 160 180 75 100 125 150 50 25 0 1 2 3 4 -50 -25 0 25 50 75 100 125 1 2 3 4 8 10 12 14 16 18 0 50 100 150 0 2 4 6 8 10 12 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 0 1 2 3 4 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 35a i c = 70a i c = 140a i c = 70a i c = 140a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 6.5v 7v i c = 35a 8.0v 8.5v 7.5v 9v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 frequency (khz) t j , junction temperature figure 8, breakdown voltage vs junction temperature bv ces , breakdown voltage (normalized) downloaded from: http:///
APT70GR65B2DU40 052-6436 rev a 5-2014 typical performance curves 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 i c = 70a t j = 25c v ce = 325v v ce = 130v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 50 100 150 200 250 0 20 40 60 80 100 120 140 0 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 0 1 02 03 04 05 0 0 1000 2000 3000 4000 5000 6000 7000 8000 0 20 40 60 80 100 120 140 v ce = 433v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 16, swiitching energy vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 433v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 433v, v ge =15v, i c = 70a t j = 125c switching energy loss ( j) e off e on2 v ce = 433v, v ge =15v, r g = 4.3 i c = 70a 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 1000 1 10 100 1000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) 1ms 100us 10ms 100ms 10us v ce = 520v downloaded from: http:///
052-6436 rev a 5-2014 APT70GR65B2DU40 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultra soft recovery anti-parallel diode 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 -4 10 -3 10 -2 0.1 1 10 -5 rectangular pulse duration (seconds) figure 18. maximum effective transient thermal impedance, junction-to-case vs. pulse duration z jc , thermal impedance (c/w) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic / test conditions ratings unit i f maximum d.c. forward current t c = 25c 57 amps t c = 75c 40 i fsm non-repetitive forward surge current (t j = 25c, t p = 10ms, half sine) 210 static electrical characteristics dynamic characteristics symbol parameter test conditions min typ max unit t rr reverse recovery time i f = 1.0a, dif/dt= -100 a/ s, v r = 30v, t j = 25c 25 ns t rr reverse recovery time i f = 40 amps dif/dt = -200 a/ s v r = 433 volts t j = 25c 75 ns q rr reverse recovery charge 111 nc i rrm maximum reverse recovery current 4 amps e rr reverse recovery energy 2 j t rr reverse recovery i f = 40 amps dif/dt = -200 a/ s v r = 433 volts t j = 125c 362 ns q rr reverse recovery charge 1062 nc i rrm maximum reverse recovery current 8 amps e rr reverse recovery energy 83 j t rr reverse recovery i f = 40 amps dif/dt = -1000 a/ s v r = 433 volts t j = 125c 160 ns q rr reverse recovery charge 1648 nc i rrm maximum reverse recovery current 25 amps e rr reverse recovery energy 261 j s softness factor (tb/ta) i f = 20a, dif/dt= -1000 a/ s, v r = 433v, t j = 125c 3 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 40a 3.0 volts i f = 80a 3.9 i f = 40a, t j = 125c 2.3 downloaded from: http:///
APT70GR65B2DU40 052-6436 rev a 5-2014 0 10 20 30 40 50 60 70 80 02 46 8 v f , anode-to-cathode voltage (v) figure 19, forward current vs. forward voltage i f , forward current (a) t j = -55 c t j = 25 c t j = 125 c t j = 150 c 0 10 20 30 40 50 60 25 50 75 100 125 150 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 t j = 125 c v r = 433v 20a 40a 80a duty cycle = 0.5 t j = 125 c v r = 433v 80a 20a 40a - di f /dt, current rate of change(a/ s) figure 20. reverse recovery time vs. current rate of change t rr , reverse recovery time (ns) -di f /dt, current rate of change (a/ s) figure 22. reverse recovery current vs. current rate of change i rrm , reverse recovery current (a) case temperature ( c) figure 24. max average forward current vs. casetemperature i f(av) (a) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 75 100 125 150 25 50 0 0 500 1000 1500 2000 2500 3000 3500 4000 0 200 400 600 800 1000 1200 t rr q rr i rrm t j = 125 c v r = 433v 80a 20a 40a 0 100 200 300 400 500 600 0 100 200 300 400 500 600 -di f /dt, current rate of change (a/ s) figure 21. reverse recovery charge vs. current rate of change q rr , reverse recovery charge (nc) t j , junction temperature ( c) figure 23. dynamic parameters vs. junction temperature k f , dynamic parameters (normalized to 1000a/ s) v r , reverse voltage (v) figure 25. junction capacitance vs. reverse voltage c j , junction capacitance ((pf) typical performance curves downloaded from: http:///
052-6436 rev a 5-2014 APT70GR65B2DU40 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) these dimensions are equal to the to-247 without the mounting hole. 2-plcs. dimensions in millimeters and (inches) t-max ? (b2) package outline 1.016(.040) collector (cathode) gate emitter (anode) collector (cathode) figure 27. diode reverse recovery waveform de? nition 4 3 1 2 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 26. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t a - time to reach maximum reverse recovery current (i rrm ). t b - time from maximum reverse recovery current (i rrm ) to projected zero crossing based on a straight line from i rrm through 25% i rrm. t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 6 7 7 5 6 downloaded from: http:///
APT70GR65B2DU40 052-6436 rev a 5-2014 disclaimer: the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi. microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. downloaded from: http:///
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